A methodology to design high-speed power-efficient MOS Current-Mode Logic (MCML) static frequency dividers is proposed. Analytical criteria to exploit the speed potential of MCML gates are first introduced. Then, an analytical strategy is formulated to progressively reduce the bias currents through the stages without affecting the divider operation speed, thereby reducing the overall power consumption. The proposed design approach is general and independent of the process adopted. Thanks to its simplicity, it can be used in a pencil-and-paper approach, avoiding a tedious and time-consuming trial-and-error approach based on simulations. Moreover, the analytical approach allows for a deeper understanding on the power-delay trade-off involved in the design. As a design example, a 1/8 frequency divider is designed and simulated by using a 0.18-um CMOS process.

Alioto, M., Mita, R., & Palumbo, G. (2006). Design of High-Speed Power-Efficient MOS Current-Mode Logic Frequency Dividers. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. II, EXPRESS BRIEFS, 53(11), 1165-1169 [10.1109/TCSII.2006.882350].

Design of High-Speed Power-Efficient MOS Current-Mode Logic Frequency Dividers

Alioto, M.;
2006

Abstract

A methodology to design high-speed power-efficient MOS Current-Mode Logic (MCML) static frequency dividers is proposed. Analytical criteria to exploit the speed potential of MCML gates are first introduced. Then, an analytical strategy is formulated to progressively reduce the bias currents through the stages without affecting the divider operation speed, thereby reducing the overall power consumption. The proposed design approach is general and independent of the process adopted. Thanks to its simplicity, it can be used in a pencil-and-paper approach, avoiding a tedious and time-consuming trial-and-error approach based on simulations. Moreover, the analytical approach allows for a deeper understanding on the power-delay trade-off involved in the design. As a design example, a 1/8 frequency divider is designed and simulated by using a 0.18-um CMOS process.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11365/36219
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