We have measured, in the 700-950°C temperature range, the effective lifetime of the 6S1,2 excited level of indium vapor confined in quartz cells. The self trapping results much lower than expected suggest an effective vapor density lower than the one calculated at the thermal equilibrium. A possible explanation of this large deviation has been found in the increasing adsorption rate of indium at the cell walls. Partial fluorescence spectrum of the adsorbed atoms is reported.
Bicchi, P., Marinelli, C., Mariotti, E., Meucci, M., Moi, L. (1994). Radiation trapping and vapor density of In confined in quartz cells. OPTICS COMMUNICATIONS, 106(4-6), 197-201 [10.1016/0030-4018(94)90321-2].
Radiation trapping and vapor density of In confined in quartz cells
BICCHI, P.;MARINELLI, C.;MARIOTTI, E.;MEUCCI, M.;MOI, L.
1994-01-01
Abstract
We have measured, in the 700-950°C temperature range, the effective lifetime of the 6S1,2 excited level of indium vapor confined in quartz cells. The self trapping results much lower than expected suggest an effective vapor density lower than the one calculated at the thermal equilibrium. A possible explanation of this large deviation has been found in the increasing adsorption rate of indium at the cell walls. Partial fluorescence spectrum of the adsorbed atoms is reported.File | Dimensione | Formato | |
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https://hdl.handle.net/11365/23789
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