A CMOS transimpedance amplifier was designed as a front end preamplifier for electro-optic quantum well sensors. The circuit layout is optimised, in terms of silicon area, to fully exploit the capability of an AT&T flip-chip technique by which the quantum well sensors are directly bonded to the last metal layer of an integrated circuit. The particular circuit topology achieves a high output swing and good noise behaviour, which allow a 70 dB dynamic range. This amplifier can be provided with peaking and or offset trimming circuits
Petri, C., Rocchi, S., Vignoli, V. (1998). High dynamic CMOS preamplifiers for QW diodes. ELECTRONICS LETTERS, 34(9), 877-878 [10.1049/el:19980587].
High dynamic CMOS preamplifiers for QW diodes.
ROCCHI, SANTINA;VIGNOLI, VALERIO
1998-01-01
Abstract
A CMOS transimpedance amplifier was designed as a front end preamplifier for electro-optic quantum well sensors. The circuit layout is optimised, in terms of silicon area, to fully exploit the capability of an AT&T flip-chip technique by which the quantum well sensors are directly bonded to the last metal layer of an integrated circuit. The particular circuit topology achieves a high output swing and good noise behaviour, which allow a 70 dB dynamic range. This amplifier can be provided with peaking and or offset trimming circuits
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https://hdl.handle.net/11365/4215
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