In this paper, a comparison of representative Dual-Edge-Triggered flip-flop topologies is carried out in a 65-nm CMOS technology. The energy- efficiency is analyzed together with other aspects, such as the area-delay tradeoff, leakage and clock-load, which are typically neglected in most papersprevious works. The investigation highlights the impact of effects that become dominant in nanometer technologies (e.g., local interconnects, leakage) and allows to for identifying the most effective FFs belonging to the DET class, as well as to evaluate the general suitability of DET topologies for real applicationsaccording to the requirements in terms of energy-delay tradeoff.

Alioto, M.B.C., E., C., G., P. (2011). DET FF Topologies: A Detailed Investigation in the Energy-Delay-Area Domain. In Proc. of ISCAS 2011 (pp.563-566).

DET FF Topologies: A Detailed Investigation in the Energy-Delay-Area Domain

ALIOTO, MASSIMO BRUNO CRIS;
2011-01-01

Abstract

In this paper, a comparison of representative Dual-Edge-Triggered flip-flop topologies is carried out in a 65-nm CMOS technology. The energy- efficiency is analyzed together with other aspects, such as the area-delay tradeoff, leakage and clock-load, which are typically neglected in most papersprevious works. The investigation highlights the impact of effects that become dominant in nanometer technologies (e.g., local interconnects, leakage) and allows to for identifying the most effective FFs belonging to the DET class, as well as to evaluate the general suitability of DET topologies for real applicationsaccording to the requirements in terms of energy-delay tradeoff.
2011
9781424494736
Alioto, M.B.C., E., C., G., P. (2011). DET FF Topologies: A Detailed Investigation in the Energy-Delay-Area Domain. In Proc. of ISCAS 2011 (pp.563-566).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11365/36088
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