This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulk MOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger V-T sensitivity to back-biasing.
M., A., Alioto, M.B.C., D., E., L., S. (2007). Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs. In Proc. of ESSDERC 2007 (pp.191-194). New York : IEEE [10.1109/ESSDERC.2007.4430911].
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs
ALIOTO, MASSIMO BRUNO CRIS;
2007-01-01
Abstract
This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulk MOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger V-T sensitivity to back-biasing.
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https://hdl.handle.net/11365/17396
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