The magnetic dressing phenomenon occurs when spins precessing in a static field (holding field) are subjected to an additional strong alternating field. It is usually studied when such extra field is homogeneous and oscillates in one direction. We study the dynamics of spins under dressing condition in two unusual configurations. In the first instance, an inhomogeneous dressing field produces a space-dependent dressing phenomenon, which helps to operate the magnetometer in a strongly inhomogeneous static field. In the second instance, besides the usual configuration with a static and a strong orthogonal oscillating magnetic fields, we add a secondary oscillating field, which is perpendicular to both. The system shows novel and interesting features that are accurately explained and modelled theoretically. Possible applications of these novel features are briefly discussed.
Bevilacqua, G., Biancalana, V., Dancheva, Y., Vigilante, A. (2021). Studying and applying magnetic dressing with a Bell and Bloom magnetometer. In XXI International Conference and School on Quantum Electronics. Bristol : Institute of Physics [10.1088/1742-6596/1859/1/012018].
Studying and applying magnetic dressing with a Bell and Bloom magnetometer
Bevilacqua, G.;Biancalana, V.
;
2021-01-01
Abstract
The magnetic dressing phenomenon occurs when spins precessing in a static field (holding field) are subjected to an additional strong alternating field. It is usually studied when such extra field is homogeneous and oscillates in one direction. We study the dynamics of spins under dressing condition in two unusual configurations. In the first instance, an inhomogeneous dressing field produces a space-dependent dressing phenomenon, which helps to operate the magnetometer in a strongly inhomogeneous static field. In the second instance, besides the usual configuration with a static and a strong orthogonal oscillating magnetic fields, we add a secondary oscillating field, which is perpendicular to both. The system shows novel and interesting features that are accurately explained and modelled theoretically. Possible applications of these novel features are briefly discussed.File | Dimensione | Formato | |
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https://hdl.handle.net/11365/1140348