Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.

Ratti, L., Brogi, P., Collazuol, G., Dalla Betta, G.-., Ficorella, A., Marrocchesi, P.S., et al. (2019). Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(12), 5230-5237 [10.1109/TED.2019.2944482].

Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs

Brogi P.;
2019-01-01

Abstract

Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.
2019
Ratti, L., Brogi, P., Collazuol, G., Dalla Betta, G.-., Ficorella, A., Marrocchesi, P.S., et al. (2019). Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(12), 5230-5237 [10.1109/TED.2019.2944482].
File in questo prodotto:
File Dimensione Formato  
08874956.pdf

non disponibili

Tipologia: PDF editoriale
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 1.34 MB
Formato Adobe PDF
1.34 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11365/1105454