Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.
Ratti, L., Brogi, P., Collazuol, G., Dalla Betta, G.-., Ficorella, A., Marrocchesi, P.S., et al. (2019). Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(12), 5230-5237 [10.1109/TED.2019.2944482].
Dark Count Rate Distribution in Neutron-Irradiated CMOS SPADs
Brogi P.;
2019-01-01
Abstract
Dark count rate (DCR) increase in CMOS single-photon avalanche diodes (SPADs) exposed to a nonmonochromatic neutron source is modeled, taking into account the source spectrum and the geometry of the device under test. Experimental results from the characterization of SPADs fabricated in a 150-nm technology and irradiated with 1-MeV neutron equivalent fluences up to 10 11 cm 2 are found to be in good agreement with the theoretically calculated distribution of the nonionizing energy deposited in the device substrate.
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https://hdl.handle.net/11365/1105454