Nanostructured Indium(III) oxide (In2O3) films deposited by low temperature pulsed electron deposition (LPED) technique on customized alumina printed circuit boards have been manufactured and characterized as gas sensing devices. Their electrical properties have monitored directly during deposition to optimize their sensing performance. Experimental results with oxidizing (NO2) as well as reducing (CO) gases in both air and inert gas carriers are discussed and modeled.
Addabbo, T., Bruzzi, M., Fort, A., Mugnaini, M., Vignoli, V. (2018). Gas sensing properties of In2O3 nano-films obtained by low temperature pulsed electron deposition technique on alumina substrates. SENSORS, 18(12) [10.3390/s18124410].
Gas sensing properties of In2O3 nano-films obtained by low temperature pulsed electron deposition technique on alumina substrates
Addabbo,T.;Bruzzi, M.;Fort, A.;Mugnaini, M.;Vignoli, V.
2018-01-01
Abstract
Nanostructured Indium(III) oxide (In2O3) films deposited by low temperature pulsed electron deposition (LPED) technique on customized alumina printed circuit boards have been manufactured and characterized as gas sensing devices. Their electrical properties have monitored directly during deposition to optimize their sensing performance. Experimental results with oxidizing (NO2) as well as reducing (CO) gases in both air and inert gas carriers are discussed and modeled.File | Dimensione | Formato | |
---|---|---|---|
01.pdf
accesso aperto
Tipologia:
PDF editoriale
Licenza:
Creative commons
Dimensione
8.53 MB
Formato
Adobe PDF
|
8.53 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11365/1083216