Flux-charge description of circuits with non-volatile switching memristor devices

This brief aims at defining a class D of extended memristors by using a combination of fundamental algebraic circuit elements corresponding to ideal memristors and nonlinear resistors. By massaging the characteristics of the constitutive elements, such class D of extended memristors is able to approximate rectifying effects and asymmetric pinched hysteresis loops of real non-volatile switching memristor devices. Finally, it is shown that if the nonlinear resistors are described in terms of piecewise linear characteristics, then the flux-charge analysis method permits to analyze the dynamics of nonlinear circuits with extended memristors in D.