The interaction of Ni film deposited on Si has been studied. Growth kinetics of Nisi on (111) and (100) silicon single crystals are reported. Activation energies for NiSi are found to be 1.23 eV for (100) and 1.83 eV for (111).
Majni, G., DELLA VALLE, F., Nobili, C. (1984). Growth kinetics of NiSi on (100) and (111) silicon. JOURNAL OF PHYSICS D. APPLIED PHYSICS, 17(5), L77-L81 [10.1088/0022-3727/17/5/002].
Growth kinetics of NiSi on (100) and (111) silicon
DELLA VALLE, Federico;
1984-01-01
Abstract
The interaction of Ni film deposited on Si has been studied. Growth kinetics of Nisi on (111) and (100) silicon single crystals are reported. Activation energies for NiSi are found to be 1.23 eV for (100) and 1.83 eV for (111).
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https://hdl.handle.net/11365/1035086