The interaction of Ni film deposited on Si has been studied. Growth kinetics of Nisi on (111) and (100) silicon single crystals are reported. Activation energies for NiSi are found to be 1.23 eV for (100) and 1.83 eV for (111).

Majni, G., DELLA VALLE, F., Nobili, C. (1984). Growth kinetics of NiSi on (100) and (111) silicon. JOURNAL OF PHYSICS D. APPLIED PHYSICS, 17(5), L77-L81 [10.1088/0022-3727/17/5/002].

Growth kinetics of NiSi on (100) and (111) silicon

DELLA VALLE, Federico;
1984-01-01

Abstract

The interaction of Ni film deposited on Si has been studied. Growth kinetics of Nisi on (111) and (100) silicon single crystals are reported. Activation energies for NiSi are found to be 1.23 eV for (100) and 1.83 eV for (111).
1984
Majni, G., DELLA VALLE, F., Nobili, C. (1984). Growth kinetics of NiSi on (100) and (111) silicon. JOURNAL OF PHYSICS D. APPLIED PHYSICS, 17(5), L77-L81 [10.1088/0022-3727/17/5/002].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11365/1035086