The growth kinetics of NiSi has been evaluated by depositing a Ni film on <111> and <100> Si substrates. X-ray diffraction and MeV 4He+ backscattering have been used to identify the compounds formed and to measure their thicknesses. Carbon and oxygen impurities have been detected with Auger electron spectrometry with Ar sputtering. During thermal annealing Ni~Si is formed first, while NiSi appears only after the total exhaustion of the Ni film. It has been found that, on both Si substrates, the thickness of NiSi increases with the square root of time. Different growth rates have been observed for the two different Si orientations. The activation energy in the (300-370) °C temperature range is 1.83 eV for NiSi grown on <111> and 1.23 eV for NiSi on <100> Si. The two competing mechanisms of Ni diffusion through NiSi by grain boundary and by substitutional processes are correlated with the different microcrystalline structure of the NiSi silicide layers grown on different Si oriented substrates.
|Titolo:||On the growth kinetics and structure of the NiSi compound on silicon single crystals|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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