Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin. © 2014 AIP Publishing LLC.
Upadhyay, S., Frederiksen, R., Lloret, N., DE VICO, L., Krogstrup, P., Jensen, J.H., et al. (2014). Indium arsenide nanowire field-effect transistors for pH and biological sensing. APPLIED PHYSICS LETTERS, 104(20), 203504 [10.1063/1.4878659].
Indium arsenide nanowire field-effect transistors for pH and biological sensing
DE VICO, LUCA;
2014-01-01
Abstract
Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H+ ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin. © 2014 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11365/1006805
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