In this work a numerical approach has been used to investigate some properties of semi-insulating GaAs detectors. In particular, the electric field and the carriers mean free path distributions have been obtained, by solving transport and Poisson equations. The knowledge of these quantities allows us to determine the charge-collection efficiency and other detector characteristics. A comparison with the experimental results of X-ray irradiated detectors of different thicknesses has been carried out.
A., C., F., Q., Ciocci, M.A., M. E., F. (1996). A study of the electrical and charge-collection properties of semi-insulating GaAs detectors. In Proceedings of the 9th International Workshop on Room Temperature Semiconductor X- and γ-Ray Detectors, Associated Electronics and Applications (pp.66-69). Amsterdam : Elsevier science [10.1016/S0168-9002(96)00333-6].
A study of the electrical and charge-collection properties of semi-insulating GaAs detectors
CIOCCI, MARIA AGNESE;
1996-01-01
Abstract
In this work a numerical approach has been used to investigate some properties of semi-insulating GaAs detectors. In particular, the electric field and the carriers mean free path distributions have been obtained, by solving transport and Poisson equations. The knowledge of these quantities allows us to determine the charge-collection efficiency and other detector characteristics. A comparison with the experimental results of X-ray irradiated detectors of different thicknesses has been carried out.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11365/37465
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