Oscillatory circuits with real memristors have attracted a lot of interest in recent years. The vast majority of circuits involve volatile memristors, while less explored is the use of non-volatile memristors. This paper considers a Chua's circuit with a non-volatile memristor that obeys the Stanford model. Exploiting the fact that such a memristor can be modeled as a programmable nonlinear resistor within some voltage range, a procedure based on the Harmonic Balance (HB) method is derived to select the circuit parameters in order to generate a family of periodic solutions via a supercritical Hopf bifurcation. These oscillatory behaviors can be programmed by using the estimations of the period and magnitude provided by the procedure, as shown in the numerical example.

Di Marco, M., Forti, M., Pancioni, L., Innocenti, G., Tesi, A. (2023). On the Design of Oscillatory Circuits Based on Stanford Memristor Model. In 2023 18th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) (pp.102-105). New York : IEEE [10.1109/CNNA60945.2023.10652778].

On the Design of Oscillatory Circuits Based on Stanford Memristor Model

Di Marco M.;Forti M.;Pancioni L.;
2023-01-01

Abstract

Oscillatory circuits with real memristors have attracted a lot of interest in recent years. The vast majority of circuits involve volatile memristors, while less explored is the use of non-volatile memristors. This paper considers a Chua's circuit with a non-volatile memristor that obeys the Stanford model. Exploiting the fact that such a memristor can be modeled as a programmable nonlinear resistor within some voltage range, a procedure based on the Harmonic Balance (HB) method is derived to select the circuit parameters in order to generate a family of periodic solutions via a supercritical Hopf bifurcation. These oscillatory behaviors can be programmed by using the estimations of the period and magnitude provided by the procedure, as shown in the numerical example.
2023
979-8-3503-0892-1
Di Marco, M., Forti, M., Pancioni, L., Innocenti, G., Tesi, A. (2023). On the Design of Oscillatory Circuits Based on Stanford Memristor Model. In 2023 18th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) (pp.102-105). New York : IEEE [10.1109/CNNA60945.2023.10652778].
File in questo prodotto:
File Dimensione Formato  
On_the_Design_of_Oscillatory_Circuits_Based_on_Stanford_Memristor_Model.pdf

non disponiibile

Tipologia: PDF editoriale
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 1.7 MB
Formato Adobe PDF
1.7 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11365/1306714