We discuss a novel investigation approach to study current limiting techniques for accurate memristor programming. In detail, referring to the case of the Stanford memristor model, we propose to analyze its programming dynamics adopting a nonlinear static analysis point of view and considering, for the sake of simplicity, the special case of a linear resistive current limiter.

Addabbo, T., Moretti, R. (2023). Static Analysis of Current Limiting Techniques for Accurate Memristor Programming. In 2023 IEEE International Symposium on Circuits and Systems (ISCAS) (pp.1-5). New York : Institute of Electrical and Electronics Engineers Inc. [10.1109/ISCAS46773.2023.10181841].

Static Analysis of Current Limiting Techniques for Accurate Memristor Programming

Addabbo T.;Moretti R.
2023-01-01

Abstract

We discuss a novel investigation approach to study current limiting techniques for accurate memristor programming. In detail, referring to the case of the Stanford memristor model, we propose to analyze its programming dynamics adopting a nonlinear static analysis point of view and considering, for the sake of simplicity, the special case of a linear resistive current limiter.
2023
978-1-6654-5109-3
Addabbo, T., Moretti, R. (2023). Static Analysis of Current Limiting Techniques for Accurate Memristor Programming. In 2023 IEEE International Symposium on Circuits and Systems (ISCAS) (pp.1-5). New York : Institute of Electrical and Electronics Engineers Inc. [10.1109/ISCAS46773.2023.10181841].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11365/1241675