Laser excitation of In atoms at the 6 2S1/2–5 2P1/2 atomic resonance transition wavelength of 410.3 nm in the presence of Hg vapor produces several types of emission features: HgIn excimer satellites on the red wings of the In resonance fluorescence transitions at 410.3 and 451.1 nm, bound-bound HgIn molecular fluorescence at 499 and 522 nm resulting from photoassociation of In(6 2S1/2) with Hg(6 1S0), and UV atomic fluorescence from the In(5 2D) states that lie at energies above the In(6 2S1/2–5 2P1/2) excitation. These various spectral features are interpreted in terms of a proposed HgIn potential-energy level diagram with additional information from measured excited-state lifetimes and the power dependence of the laser excitation at 410.3 and 522 nm. Direct excitation of the 499 and 522 nm HgIn bound-bound transitions also produces emission at 410.3 and 451.1 nm resulting from collisional dissociation of the excited HgIn states.

Bicchi, P., Marinelli, C., Bernheim, R.A. (1997). HgIn photoassociation, bound-bound transitions, and excimer emission. PHYSICAL REVIEW A, 56(3), 2025-2031 [10.1103/PhysRevA.56.2025].

HgIn photoassociation, bound-bound transitions, and excimer emission

BICCHI, P.;MARINELLI, C.;
1997-01-01

Abstract

Laser excitation of In atoms at the 6 2S1/2–5 2P1/2 atomic resonance transition wavelength of 410.3 nm in the presence of Hg vapor produces several types of emission features: HgIn excimer satellites on the red wings of the In resonance fluorescence transitions at 410.3 and 451.1 nm, bound-bound HgIn molecular fluorescence at 499 and 522 nm resulting from photoassociation of In(6 2S1/2) with Hg(6 1S0), and UV atomic fluorescence from the In(5 2D) states that lie at energies above the In(6 2S1/2–5 2P1/2) excitation. These various spectral features are interpreted in terms of a proposed HgIn potential-energy level diagram with additional information from measured excited-state lifetimes and the power dependence of the laser excitation at 410.3 and 522 nm. Direct excitation of the 499 and 522 nm HgIn bound-bound transitions also produces emission at 410.3 and 451.1 nm resulting from collisional dissociation of the excited HgIn states.
1997
Bicchi, P., Marinelli, C., Bernheim, R.A. (1997). HgIn photoassociation, bound-bound transitions, and excimer emission. PHYSICAL REVIEW A, 56(3), 2025-2031 [10.1103/PhysRevA.56.2025].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11365/24214
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