Imaging capabilities, spatial resolution and analysis have been performed to compare the characteristics of imaging systems based on pixel detectors of different thickness. Each system consists of a single photon counting chip (PCC), developed in the framework of the Medipix Collaboration [1], bump bonded to a silicon detector. The detector is a matrix of 64 x 64 square pixels, with 170 mu m pitch and thickness ranging from 300 to 800 an. As expected, the intrinsic detection efficiency increases with detector thickness (for 22 keV photons the detection efficiency doubles in the examined thickness range [2]), nevertheless the spatial resolution can be affected by a charge sharing mechanism between adjacent pixels due to charge diffusion. We have studied this effect and its dependence on the detector bias voltage and the threshold value of PCC with the aim of optimizing both the detection efficiency and the spatial resolution. RI Dalla Betta, Gian-Franco/I-1783-2012

Bisogni, M.G., Bulajic, D., Boscardin, M., Dalla Betta, G.F., Delogu, P., Fantacci, M.E., et al. (2004). Image quality and spectroscopic characteristics of different silicon pixel imaging systems. In IEEE CONFERENCE RECORD - NUCLEAR SCIENCE SYMPOSIUM & MEDICAL IMAGING CONFERENCE. [altro titolo: MEDICAL IMAGING CONFERENCE.] E212979 - issn: 1082-3654 (attiva dal 1994) Collana (pp.4365-4368). Bellingham : IEEE.

Image quality and spectroscopic characteristics of different silicon pixel imaging systems

Delogu, P.;
2004-01-01

Abstract

Imaging capabilities, spatial resolution and analysis have been performed to compare the characteristics of imaging systems based on pixel detectors of different thickness. Each system consists of a single photon counting chip (PCC), developed in the framework of the Medipix Collaboration [1], bump bonded to a silicon detector. The detector is a matrix of 64 x 64 square pixels, with 170 mu m pitch and thickness ranging from 300 to 800 an. As expected, the intrinsic detection efficiency increases with detector thickness (for 22 keV photons the detection efficiency doubles in the examined thickness range [2]), nevertheless the spatial resolution can be affected by a charge sharing mechanism between adjacent pixels due to charge diffusion. We have studied this effect and its dependence on the detector bias voltage and the threshold value of PCC with the aim of optimizing both the detection efficiency and the spatial resolution. RI Dalla Betta, Gian-Franco/I-1783-2012
2004
0-7803-8700-7
Bisogni, M.G., Bulajic, D., Boscardin, M., Dalla Betta, G.F., Delogu, P., Fantacci, M.E., et al. (2004). Image quality and spectroscopic characteristics of different silicon pixel imaging systems. In IEEE CONFERENCE RECORD - NUCLEAR SCIENCE SYMPOSIUM & MEDICAL IMAGING CONFERENCE. [altro titolo: MEDICAL IMAGING CONFERENCE.] E212979 - issn: 1082-3654 (attiva dal 1994) Collana (pp.4365-4368). Bellingham : IEEE.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11365/1006382
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